Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature 后印本

摘要: Optically addressable spin defects in solid-state materials are the promising platform for quantum information applications, such as quantum network. The two-dimensional (2D) hexagonal boron nitride (hBN) as a carrier of abundant defects is an emerging candidate. While negatively charged boron vacancy (V$_\text{B}^-$) spin defect in hBN is studied intensively, the coherent control of single spin in 2D materials has not been realized yet, which constitutes the cornerstone for applying the 2D spin defect in quantum-information tasks. Here, we report the first coherent control of the single electronic spin in 2D materials at room temperature. Considering both the optical and spin properties, this defect belongs to a new type of spin defects distinguished to all other spin defects observed before. This defect has simultaneously the narrow zero-phonon line, high Debye-Waller factor, high brightness, high polarization of PL photons, low $ g^{(2)}(0) $, moderate spin $ T_{1} $ and $ T_{2} $ comparable to V$ _\text{B}^{-} $. These excellent optical properties and relatively good spin properties of this single spin lay the foundation for the applications of the 2D-material-hosted spin defects in quantum information tasks.