Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride 后印本

摘要: Optically addressable spins in two-dimensional hexagonal boron nitride (hBN) attract widespread attention for their potential advantage in on-chip quantum devices, such as quantum sensors and quantum network. A variety of spin defects have been found in hBN, but no convenient and deterministic generation methods have been reported for other defects except negatively charged boron vacancy ($\rm V_B^-$). Here we report that by using femtosecond laser direct writing technology, we can deterministically create spin defect ensembles with spectra range from 550 nm to 800 nm. Positive single-peak optically detected magnetic resonance (ODMR) signals are detected in the presence of longitudinal magnetic field, and the contrast can reach 0.8%. With the appropriate thickness of hBN flakes and femtosecond laser pulse energy, we can deterministically generate bright spin defects in-situ. Our results provide a convenient deterministic method to create spin defects in hBN, which will motivate more endeavors for future researches and applications of spin-based technologies.