Low-noise large-bandwidth high-gain transimpedance amplifier for cryogenic STM at 77 K

摘要: In this work, we design and fabricate the transimpedance Amplifier (TIA) following the design mentioned in Ref. cite{Liang2024}. In the TIA, the preamplifier (Pre-Amp) is made of a junction field effect transistor (JFET) that can work at 77 K. The post-amplifier is made of an operational amplifier (OPA). Cascade Pre-Amp and Post-Amp to form the inverting-amplifier (Inv-Amp). The gain-bandwidth product of Inv-Amp with the gain about 50,000 is higher than 10 GHz. With a 1.13 Gohm feedback network, the gain of TIA is 1.13 Gohm and its bandwidth is about 97 kHz. The equivalent input noise voltage power spectral density of TIA is not more than 9 (nV)²/Hz at 10 kHz and 4 (nV)2/Hz at 50kHz, and its equivalent input noise current power spectral density is about 26 (fA)²/Hz at 10 kHz and 240(fA)2/Hz at 50 kHz. The measured transport performances and noise performances of TIA are consistent with the simulations and calculations, verifying the feasibility for the design of low-noise large-bandwidth TIA proposed in Ref. 1 . And, TIA with various performances that meet various needs can be designed according to the design methods in Ref. 1,2 . With the same gain, the bandwidth of the TIA in this work is much larger than the present TIA and its noises are much lower than those of present ones. The TIA in this work is perfect for the cryogenic STM working at 77 K (i.e. liquid nitrogen temperature).