摘要： We report on using synthetic silicon for a high-precision X-ray polarimeter comprising a polarizer and an analyzer, each based on a monolithic channel-cut crystal used at multiple Brewster reflections with a Bragg angle very close to 45°. Experiments were performed at the BL09B bending magnet beamline of the Shanghai Synchrotron Radiation Facility using a Si(800) crystal at an X-ray energy of 12.914 keV. A polarization purity of 8.4×10-9 was measured. This result is encouraging, as the measured polarization purity is the best-reported value for the bending magnet source. Notably, this is the firstly systematic study on the hard X-ray polarimeter in China, which is crucial for exploring new physics, such as verifying vacuum birefringence.
摘要： Evaluating the comprehensive characteristics of extreme ultraviolet (EUV) photoresists is crucial for their application in EUV lithography, a key process in modern technology. This paper highlights the capabilities of the Shanghai Synchrotron Radiation Facility (SSRF) 08U1B beamline in advancing this field. Specifically, it demonstrates how this beamline can create fringe patterns with a 15-nm half-pitch (HP) on a resist using synchrotron-based EUV lithography (EUV-IL). This achievement is vital for evaluating EUV photoresists at the advanced 5-nm node. We provide a detailed introduction to the methods and experimental setup used at the SSRF 08U1B beamline to assess an EUV photoresist. A significant part of this research involved the fabrication of high-resolution hydrogen silsesquioxane (HSQ) mask gratings. These gratings, with an aspect ratio of approximately 3, were created using electron beam lithography (EBL) on an innovative mask framework. This framework was crucial in eliminating the impact of zeroth-order light on interference patterns. The proposed framework offers a new approach to mask fabrication, particularly beneficial for achromatic Talbot lithography and multicoherent-beam interference applications.