摘要: We report a high-responsive hot-electron photodetector based on the
integration of an Au-MoS$_2$ junction with a silicon nitride microring
resonator (MRR) for detecting telecom-band light. The coupling of the
evanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottky
junction region enhances the hot-electron injection efficiency. The device
exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and
the moderately uniform responsivities are obtained over the wavelength range of
1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers
possibilities for integrated optoelectronic systems.
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分类：
光学
>>
量子光学
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引用：
ChinaXiv:202303.01529
(或此版本
ChinaXiv:202303.01529V1)
DOI:10.12074/202303.01529V1
CSTR:32003.36.ChinaXiv.202303.01529.V1
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科创链TXID：
fe53dace-7352-44f2-bb7f-84f853eaa93f
- 推荐引用方式：
Qiao Zhang,Yingke Ji,Siqi Hu,Zhiwen Li,Chen Li,Linpeng Gu,Ruijuan Tian,Jiachen Zhang,Liang Fang,Bijun Zhao,Jianlin Zhao,Xuetao Gan.High-responsivity MoS$_2$ hot-electron telecom-band photodetector
integrated with microring resonator.中国科学院科技论文预发布平台.[ChinaXiv:202303.01529V1]
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