Large-scale ultra-fast strain engineering of CVD-grown two-dimensional materials on strain self-limited deformable nanostructures towards enhanced field effect transistors

摘要: Strain engineering of 2D materials is capable of tuning the electrical and optical properties of the materials without introducing additional atoms. However, there are still great challenges in realizing straining of 2D materials with CMOS compatibility. Here, a method for large-scale ultrafast strain engineering of CVD-grown 2D materials is proposed. We introduce locally non-uniform strains through the cooperative deformation of materials and metal/metal oxide core/shell nanoparticles through cold laser shock. Raman and PL spectra reveal that the tensile strain of MoS₂ changes and the band gap decreases after laser shock. MD simulations are used to investigate the mechanism of the ultrafast straining of CVD-grown 2D materials. Field effect transistors of CVD MoS₂ were fabricated, and the performances before and after straining of the same devices are compared. By adjusting the strain level of MoS₂, the field effect mobility can be increased from 1.9 cm²V^-1s^-1 to 44.1 cm²V^-1s^-1. This is the maximum value of MoS₂ FETs grown by CVD with SiO₂ as dielectric. As an environment-friendly, large-scale and ultra-fast manufacturing method, laser shock provides a universal strategy for large-scale adjustment of 2D materials strain, which will help to promote the manufacturing of 2D nano electronic devices and optoelectronic devices.