摘要: Polycrystalline ZnSnN2 thin films were successfully prepared by DC magnetron sputtering at room temperature. Both the as-deposited and annealed films showed n-type conduction, with electron concentration varying between 1.6 x 10[18] and 2.3 x 10[17] cm[-3
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期刊:
OPTICS LETTERS
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分类:
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引用:
ChinaXiv:201705.00496
(或此版本
ChinaXiv:201705.00496V1)
DOI:10.12074/201705.00496V1
CSTR:32003.36.ChinaXiv.201705.00496.V1
- 推荐引用方式:
Deng, FL [Deng, Fuling][ 1,2 ],Cao, HT [Cao, Hongtao][ 2 ],Liang, LY [Liang, Lingyan][ 2 ],Li, J [Li, Jun][ 2 ],Gao, JH [Gao, Junhua][ 2 ],Zhang, HL [Zhang, Hongliang][ 2 ],Qin, RF [Qin, Ruifeng][ 2 ],Liu, CC [Liu, Caichi][ 1 ].Determination of the basic optical parameters of ZnSnN2.中国科学院科技论文预发布平台.[ChinaXiv:201705.00496V1]
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