Demonstration of Pm-147 GaN betavoltaic cells

分类： 核科学技术 >> 核探测技术与核电子学 提交时间： 2023-06-18 合作期刊: 《Nuclear Science and Techniques》

WANG Guan-Quan LI Hao LEI Yi-Song ZHAO Wen-Bo YANG Yu-Qing LUO Shun-Zhong

摘要： Two GaN p-(i)-n diodes were designed and fabricated, and their electrical performances with 63Ni and 147Pm plate sources were compared. The results showed that the diodes with 147Pm had better electrical performances, with a short-circuit current (Isc) of 59 nA, an open-circuit voltage (Voc) of 1.4 V, and a maximum power (Pmax) of 49.4 nw. The ways to improve the electrical performances are discussed, including appropriate increase of the i-GaN thickness.

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