分类： 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间： 2017-05-02
Wang, GJ [Wang, Guojie][ 1,2 ]
Jiu, TG [Jiu, Tonggang][ 1 ]
Tang, G [Tang, Gang][ 1 ]
Li, J [Li, Jun][ 1 ]
Li, PD [Li, Pandeng][ 1 ]
Song, XJ [Song, Xiaojin][ 2 ]
Lu, FS [Lu, Fushen][ 2 ]
Fang, JF [Fang, Junfeng][ 1 ]
摘要： We used cesium stearate (CsSt) to modify the interface of the electron- extracting contact in inverted organic solar cells. Surface microstructure, optical properties, and electrical characterization as well as exciton generation rate and dissociation probability were investigated to understand the impact of CsSt on the interface contact. The results indicated that by incorporation of CsSt, the surface morphology and energy level as well as conductivity of a zinc oxide (ZnO) film were improved. On the basis of the above properties, highly efficient inverted organic solar cells have been demonstrated by using a ZnO nanoparticle film and CsSt stacked bilayer structure as the cathode interfacial layer. The insertion of a CsSt layer between the ZnO film and active layer improved the electron extraction efficiency, and a high power conversion efficiency (PCE) of 8.69% was achieved. The PCE was improved by 20% as compared to the reference device using a ZnO-only electron extraction layer.
分类： 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间： 2017-05-02
Liu, Q [Liu, Quan][ 1,2 ]
Liang, LY [Liang, Lingyan][ 1 ]
Cao, HT [Cao, Hongtao][ 1 ]
Luo, H [Luo, Hao][ 1 ]
Zhang, HL [Zhang, Hongliang][ 1 ]
Li, J [Li, Jun][ 1 ]
Li, XX [Li, Xiuxia][ 1 ]
Deng, FL [Deng, Fuling][ 1 ]
摘要： In this study, (001) and (101)-orientated polycrystalline SnO films were respectively fabricated. The preferred orientation conversion was observed by modifying the stoichiometry of the SnO films. It was revealed that the O-rich and Sn-rich SnO films favor (001) and (101) grain orientations, respectively. Moreover, based on the Raman selection rule and our experimental results, the 110 cm 1 Raman peak is assigned to the low- frequency Eg mode of SnO. The Raman intensity ratio between the 110 cm 1 and 210 cm 1 peak of SnO increases with the relative texture coefficient of the (101) grain orientation but decreases with that of the (001) one, demonstrating that the Raman characteristic information could be used as fingerprint recognition to mutually predict the crystallographic texture of SnO films.
分类： 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间： 2017-05-02
Li, PD [Li, Pandeng][ 1,2 ]
Sun, CM [Sun, Chunming][ 1 ]
Jiu, TG [Jiu, Tonggang][ 1 ]
Wang, GJ [Wang, Guojie][ 1 ]
Li, J [Li, Jun][ 1 ]
Li, XF [Li, Xiaofang][ 2 ]
Fangt, JF [Fangt, Junfeng][ 1 ]
摘要： We reported the favorable cathode buffer layer based on a blend of ZnO nanoparticles (NPs) and TiO2 nanorods (NRs) applied to inverted solar cells. In addition to the high optical transmittance, the resultant blend film gave a relatively dense film with lower roughness than that of the respective single-component film. This improved the interface contact between the buffer layer and photoactive layer and therefore reduced the contact resistance and leakage current. Moreover, the combination of NRs and NPs increased the efficiency of electron transport and collection by providing both a direct path for electron transport from TiO2 NRs and a large contact area between ZnO NPs and the active layer. Consequently, both the short-circuit current density (Jsc) and fill factor (FF) in the device were improved, leading to an improvement of the device performance. The best power conversion efficiency (PCE) based on the blend film as the buffer layer reached 8.82%, which was preferable to those of a single ZnO NP film (7.76%) and a TiO2 NR-based device (7.66%). KEYWORDS: ZnO nanoparticles, TiO2 nanorods, blend film, cathode buffer layer, inverted solar cells
提交时间： 2017-05-02
Pan, RB [Pan, Ruobing][ 1,2 ]
Li, J [Li, Jun][ 1 ]
Zhuge, F [Zhuge, Fei][ 1 ]
Zhu, LQ [Zhu, Liqiang][ 1 ]
Liang, LY [Liang, Lingyan][ 1 ]
Zhang, HL [Zhang, Hongliang][ 1 ]
Gao, JH [Gao, Junhua][ 1 ]
Cao, HT [Cao, Hongtao][ 1 ]
Fu, B [Fu, Bing][ 1 ]
Li, K [Li, Kang][ 1 ]
摘要： Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/Z
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