Research progress of Smart-Cut technology used in semiconductors

Subjects: Nuclear Science and Technology >> Other Disciplines of Nuclear Science submitted time 2024-05-07

ZHANG Jintao WANG Li ZHOU Junjun ZHANG Tongmin LI Jun YANG Junyuan LI Bingsheng

Abstract： Smart-Cut technology is a technique of exploiting both ion implantation and wafer bonding to transfer ultrathin single-crystal layers from a donor substrate to a receiving substrate. In advanced microelectronic systems, as one of the important technical means of heterogeneous integration for semiconductor materials, Smart-Cut technology has been widely concerned by academia and industry. Smart-Cut technology is the process of implanting H+, He+ ions or co-implantation them into the surface of semiconductor materials, and adjusting the implantation parameters (energy, temperature, dose, dose rate, ion implantation sequence, etc.). After the bonding of implanted semiconductor material and substrate at low temperatures, annealing (temperature, time, rate) that generates microcracks parallel to the surface is performed to achieve layer transfer. In this paper, the research progress of the Smart-Cut technology used in the first-, second-, third- and fourth-generation semiconductors in the past two decades is summarized. The microstructure and microcracks nucleation and growth mechanisms are analyzed. The reasons for the exfoliation thresholds of different semiconductors are discussed. The paper is helpful for understanding the application of Smart-Cut technology used in the fabricating of semiconductor devices.

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