Tailoring the resonance wavelength and loss of highly Ga doped ZnO plasmonic materials by varied doping content and substrate temperature

分类： 物理学 >> 普通物理:统计和量子力学,量子信息等 提交时间： 2017-05-02

Zhu, CT [Zhu, Chaoting][ 1 ] Li, J [Li, Jia][ 1 ] Yang, Y [Yang, Ye][ 1 ] Lan, PJ [Lan, Pinjun][ 1 ] Huang, JH [Huang, Jinhua][ 1 ] Lu, YH [Lu, Yuehui][ 1 ] Tan, RQ [Tan, Ruiqin][ 2 ] Dai, N [Dai, Ning][ 3 ] Song, WJ [Song, Weijie][ 1,4 ]

摘要： In this paper, Ga-doped ZnO (GZO) thin films are deposited on glass substrates by radio frequency magnetron sputtering for low loss plasmonic applications. The effects of Ga2O3 content in the target and substrate temperature on the electrical, structural and optical properties of GZO films are investigated. Film with the highest carrier concen- tration of 7.0 × 1020 cm− 3 was obtained at a Ga2O3 content of 5 wt% in the target under room temperature deposi- tion. With increasing deposition temperature, the lowest electrical resistivity of 3.8 × 10− 4 Ω cm was acquired at a deposition temperature of 200 °C. The values of plasmonic resonances wavelength could be changed from 1.35 to 2.39 μm by adjusting the carrier concentration. Material absorption losses in these GZO films are 10 times lower than that of conventional Ag films at telecommunication wavelengths. These results make GZO a promising low-loss plasmonic material operating at telecommunication wavelengths.

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