分类: 核科学技术 >> 粒子加速器 提交时间: 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要: The X-ray diffraction beamline developed at Shanghai Synchrotron Radiation Facility (SSRF)is located at the BL14B1 bending magnet port of the 3.5 GeV storage ring. The beamline optics is based on a collimating mirror, a sagittally focused double crystal monochromator and a focusing mirror. Photon flux of 4.43�1011 phs/s at 10 keV is obtained. The primary instrument equipped in the experimental end-station is a Huber 5021 six-cycle diffractometer. BL14B1 is a general purpose X-ray diffraction beamline and focused on material science, condensed matter physics and other relevant fields looking for structural information.
分类: 物理学 >> 核物理学 提交时间: 2016-09-13
摘要: As the main tracking detector of BESIII, the drift chamber works for accurate measurements of the tracking and the momentum of the charged particles decayed from the reaction of BEPCII e+ and e-. After operation six years, the drift chamber is suffering from aging problems due to huge beam related background. The gains of the cells in the first ten layers experience an obvious decrease, reaching a maximum of about 29% for the first layer cells. Two calculation methods for the gains change (Bhabha events and accumulated charges with 0.3% aging ratio for inner chamber cells) get almost the same results. For the Malter effect encountered by the inner drift chamber in Jan., 2012, about 0.2% water vapor was added to MDC gas mixture to solve this cathode aging problem. These results provide an important reference for MDC operation high voltage setting and the upgrade of the inner drift chamber.
分类: 物理学 >> 核物理学 提交时间: 2016-09-13
摘要: A silicon pixel detector with fine pitch size of 19x19 um, developed base on SOI (silicon on insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative way to particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.