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按提交时间
2023
1
按主题分类
核探测技术与核电子学
1
按作者
DUAN Jing-Lai
1
EN Yun-Fei
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GENG Chao
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GU Song
1
HOU Ming-Dong
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LIU Jie
1
LUO Jie
1
MO Dan
1
SU Hong
1
SUN You-Mei
1
XI Kai
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YAO Hui-Jun
1
ZHANG Zhan-Gang
1
按机构
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
1
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
1
University of Chinese Academy of Sciences, Beijing 100049, China
1
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Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
1. ChinaXiv:202306.00235
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Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout
分类:
核科学技术
>>
核探测技术与核电子学
提交时间:
2023-06-18
合作期刊:
《Nuclear Science and Techniques》
ZHANG Zhan-Gang
LIU Jie
HOU Ming-Dong
SUN You-Mei
SU Hong
GU Song
GENG Chao
YAO Hui-Jun
LUO Jie
DUAN Jing-Lai
MO Dan
XI Kai
EN Yun-Fei
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