分类: 物理学 >> 核物理学 提交时间: 2025-04-17
摘要: Gallium nitride (GaN)-based devices are highly attractive candidates for space and aeronautics due to their wide band gap and high critical electric field. However, the mechanism of radiation damage and long-term application reliability of the device are still unclear. This study systematically examines the degradation mechanisms of gate oxide layers in Cascode GaN power devices under proton irradiation at different energy levels. The typical degradation of electrical properties was observed. Following 25 MeV proton irradiation, the gate leakage current increased from 4.18×10-12 A to 4.42×10-10 A. After 60 MeV proton irradiation, the gate leakage current rose from 3.88×10-12 A to 3.81×10-10 A. In contrast, no significant change in gate current was observed after 100 MeV proton irradiation. Time-dependent dielectric breakdown (TDDB) analysis confirmed an elevated risk of gate current leakage under proton irradiation. Proton irradiation increases defect density in the device oxide layer, leading to the formation of leakage paths. In addition, SRIM simulation results based on Monte Carlo indicated that the interaction cross section between low-energy protons and target nuclei is larger, which will cause more defects in the device, leading to the low-energy proton damage becoming more severe. These radiation-induced defects in the gate oxide layer accelerate dielectric breakdown, ultimately compromising the device's long-term reliability.
分类: 物理学 >> 核物理学 提交时间: 2025-01-06
摘要: In this paper, the effects of proton irradiation with different energies on the long-term reliability of gate-oxide in Cascode enhanced GaN power device is studied. The typical degradation of electrical properties was observed. In contrast, the gate current was increased by about two orders of magnitude after 25 MeV and 60 MeV proton irradiation, while the gate current was unchanged significantly after 100 MeV proton irradiation. By using time-dependent dielectric breakdown (TDDB) method confirms that the risk of gate current leakage is increased under proton irradiation. The breakdown time of gate dielectric becomes shorter after proton irradiation, which is not conducive to the long-term and stable application of GaN power devices. In addition, SRIM simulation results show that the interaction cross section between low-energy protons and target nucleus is larger, which will cause more defects in the device, leading to the low-energy proton damage becomes more severe. Proton irradiation produces defects in the gate-oxide layer that shorten the breakdown time of the device gate-oxide layer, ultimately resulting the long-term reliability of the device was reduced.