分类: 材料科学 >> 纳米科学和纳米技术 提交时间: 2017-03-30
摘要: Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operatio
分类: 材料科学 >> 纳米科学和纳米技术 提交时间: 2017-03-30
摘要: Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operatio
提交时间: 2017-05-02
摘要: We describe the lateral-coupled junctionless indium-zinc-oxide [IZO] thin-film transistors [TFTs] in which there are no junctions between channel and source/drain electrodes and with solid-state phosphosilicate glass electrolyte [PSG] gating. Due to the t