分类: 核科学技术 >> 粒子加速器 提交时间: 2023-06-18 合作期刊: 《Nuclear Science and Techniques》
摘要: Different channel lengths and layouts on 0.18 m NMOS transistors are designed for investigating the dependence of short channel effects (SCEs) on the width of shallow trench isolation (STI) devices and designing in radiation hardness. Results show that, prior to irradiation, the devices exhibited nearideal IV characteristics, with no significant SCEs. Following irradiation, no noticeable shift of threshold voltage is observed, radiationinduced edgeleakage current, however, exhibits significant sensitivity on TID. Moreover, radiationenhanced drain induced barrier lowering (DIBL) and channel length modulation (CLM) effects are observed on shortchannel NMOS transistors. Comparing to stripegate layout, enclosedgate layout has excellent radiation tolerance.