Comparison of SEB Cross-section between Spallation Neutron and Mono-energetic Proton for SiC MOSFETs

摘要: The radiation-induced single event burnout (SEB) is observed for SiC MOSFETs by conducting proton and spallation neutron irradiation. Proton irradiation at different energies indicates that the SEB cross-section increases with the increase of proton energy. Under different bias voltages, the SEB cross-section of protons with energies of 100 MeV and above will exceed that of spallation neutrons. The atmospheric neutron SEB failure rates of SiC MOSFETs are calculated based on the proton-induced and neutron-induced SEB cross-sections, respectively. The failure rates calculated by the two different methods are consistent, with the error between the two results being less than 49%. The information of the secondary ions produced by spallation neutron and proton is obtained through Monte Carlo simulations. The simulation results imply that the SEB caused by protons and spallation neutrons is strongly correlated with the ionizing energy deposition of their secondary ions from nuclear reactions. As the proton energy increases, the number of secondary ion products with sufficient energy deposition to induce SEB increases. The magnitude of the SEB cross-sections for spallation neutrons and protons also depends on the number of secondary particles that deposit energy above the threshold energy.