Abstract:
Ultra-broadband imaging devices with high performance are in great demand for
a variety of technological applications, including imaging, remote sensing, and
communications. An ultra-broadband up-converter is realized based on a p-GaAs
homojunction interfacial workfunction internal photoemission (HIWIP)
detector-light emitting diode (LED) device. The device demonstrates an
ultra-broad response ranging from visible to terahertz (THz) with good
reproducibility. The peak responsivity in the mid-infrared (MIR) region is 140
mA/W at 10.5 microns. The HIWIP-LED shows enormous potential for
ultra-broadband up-conversion covering all infrared atmospheric windows, as
well as the THz region, and the pixel-less imaging of the MIR spot from the CO2
laser is further demonstrated. In addition, the proposed up-converter also
performs as a near-infrared and visible detector under zero bias by using a
bi-functional LED. Thanks to its ultra-wide response, the HIWIP-LED
up-converter has great promise for stable, high-performance ultra-broadband
pixel-less imaging and multi-functional analysis systems.
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Subject:
Optics
>>
Quantum optics
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Cite as:
ChinaXiv:202303.01264
(or this version
ChinaXiv:202303.01264V1)
DOI:10.12074/202303.01264V1
CSTR:32003.36.ChinaXiv.202303.01264.V1
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TXID:
70927ee9-804a-444b-b93b-88c2e12f6a8a
- Recommended references:
X. H. Li,P. Bai,S. H. Huang,X. Q. Bai,W. J. Song,X. R. Lian,C. Hu,Z. W. Shi,W. Z. Shen,Y. H. Zhang,Z. L. Fu,D. X. Shao,Z. Y. Tan,J. C. Cao,C. Tan,G. Y. Xu.Realization of ultra-broadband IR up-conversion imaging.中国科学院科技论文预发布平台.[ChinaXiv:202303.01264V1]
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