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1. chinaXiv:202103.00131 [pdf]

Direct-writing of two-dimensional diodes by focused ion beams

Tan Yang
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

In the past decade, electronic devices based on graphene and the related two-dimensional (2D) materials have exhibited outstanding figures of merit. However, so far, the fabrication of two-dimensional diodes, as elementary building blocks of electronic devices, still relies on manual or semi-automated handling processing. To unleash their commercial potential, the integration of 2D materials into a fully-automated fabrication line is a critical step. Here, we elucidate the focused ion-beam writing as an automated approach to construct lateral diodes on a 2D heterostructure (MoSe2/G) consisting of the stacked monolayer graphene and MoSe2. Se-defects generated by focused ion writing endow the 2D heterostructure with unique electronic properties like the adjustable work function and the quasi-metallic state, which allows for the construction of the barrier at the boundary of the writing and non-writing region. Benefiting from this feature, the ion-beam-written heterostructure is used to realize rectifying and current regulating diodes. Exhibiting comparable performance to traditional diodes, the rectifying diode has a rectification ratio of ~104, while the current regulative diode has a dynamic resistance larger than 4.5 MΩ. Furthermore, to illustrate practical applications of these diodes in digital logic electronics, AND and OR logic gates are directly inscribed on the heterostructure by ion beams. Our work demonstrates the focused ion-beam writing as an additional strategy for direct-writing of 2D diodes on graphene-based heterostructures.

submitted time 2021-03-24 Hits8006Downloads889 Comment 0

2. chinaXiv:202007.00012 [pdf]


Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology


submitted time 2020-06-13 Hits8772Downloads952 Comment 0

3. chinaXiv:202002.00069 [pdf]


王基庆; 李志国
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology


submitted time 2020-02-25 Hits16876Downloads2382 Comment 0

4. chinaXiv:201903.00190 [pdf]

Mathematical principle of m×n resistor networks

Tan Zhi-Zhong ; Tan Zhen
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

The unified processing and research of multiple network models are implemented, and a new theoretical breakthrough is made, which sets up two new theorems on evaluating the exact electrical characteristics (potential and resistance) of the complex m×n resistor networks by the Recursion-Transform method with potential parameters (RT-V), applies to a variety of different types of lattice structure with arbitrary boundaries such as the nonregular m×n rectangular networks and the nonregular m×n cylindrical networks. Our research gives the analytical solutions of electrical characteristics of the complex networks (finite, semi-infinite and infinite), which has not been solved before. As applications of the theorems, a series of analytical solutions of potential and resistance of the complex resistor networks are discovered. In particular, three novel mathematical propositions are discovered when comparing the resistance in two resistor networks, and many interesting trigonometric identities are discovered as well.

submitted time 2019-03-12 Hits16029Downloads1377 Comment 0

5. chinaXiv:201803.01543 [pdf]

Ultrafine nickel nanoparticles modified reduced graphene oxide as efficient non-platinum catalysts for methanol oxidation

Hongmei Sun; Jun Liu; Zhenfei Tian; Yixing Ye; Changhao Liang
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

Synthesis of low-cost, highly-active and durable non-platinum metal catalysts for methanol oxidation reaction (MOR) is always full of challenge. Here, Ni nanoparticles modified reduced graphene oxide (Ni/rGO) as an efficient non-platinum catalyst were synthesized by laser ablation of Ni target in graphene oxide (GO) solution and the following in situ reduction process. It found that GO played an important role to restrict the growth and aggregation of ultrafine nickel colloids (< 5 nm) in the process of laser ablation. The resulting Ni/rGO catalyst showed advantageous in active sites and charge transport resulting from the small particle size, uniform dispersion and electronic effect arising from the electron interactions between reduced graphene oxide (rGO) and Ni. The obtained Ni/rGO exhibited the ultrahigh catalytic mass activity of 1600 mA/mg, methanol saturation concentration (4 M), which was superior to that of the reported Ni-based catalysts. Remarkably the mass activities of Ni/rGO before and after 1000 cycles exceed that of the commercial Pt/C catalyst, indicating excellent catalytic activity and stability.

submitted time 2018-03-30 Hits3174Downloads1616 Comment 0

6. chinaXiv:201803.01544 [pdf]

Ni3+ doped cobalt-??nickel layered double hydroxides as high performance electrode material for supercapacitors

Hongmei Sun; Yixing Ye; Zhenfei Tian; Shouliang Wu; Jun Liu
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

Co-Ni layered double hydroxides (LDHs), as promising supercapacitor electrode materials with high specific capacity, have suffered poor rate property and cycle stability. By doping and topochemical oxidation of Ni ions is considered as efficivent rout to overcome these drawbacks. In this work, Ni3+ doped cobalt-nickel layered double hydroxides (Co-Ni-LDHs) were synthesized by pluse laser ablation of Ni taget in CoCl2 aqeous solution. The existence of Ni3+ ions doped in Co-Ni-LDHs decline the conductive resistance, and increase the mobility of surface charge and transfer rate of electrolyte. As a results, the Ni3+ doped Co-Ni-LDHs display a maximum specific capacitance of 2275 F/g and 1450 F/g at the current density of 1 A/g and 20 A/g, respectivly, indicating a high rate specific capacitance. Moreover, the capacitance retention is to be 80% after 1800 cycles at the current density of 6 A/g, manifesting good cycling stability of Ni3+ doped Co-Ni-LDHs.

submitted time 2018-03-30 Hits3096Downloads1553 Comment 0

7. chinaXiv:201803.01545 [pdf]

Site-specifically Immobilize Pt Nanocrystals on NiFe Layered Double Hydroxide: Old Catalysts with Enhanced Stability Through strong Fe3+-O(H)-Pt Interfacial Contact

Yechuang Han; Pengfei Li; Jun Liu; Shouliang Wu ; Yixing Ye; Zhenfei Tian; Changhao Liang
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

Agglomeration-triggered deactivation of supported platinum electrocatalysts markedly hinders their application in methanol oxidation reaction (MOR). In this study, graphene-supported nickel–iron layered double hydroxide (NiFe–LDH/rGO), in which Fe3+ was introduced to replace Ni2+ partially in the Ni(OH)2 lattice to provide stronger metal–support bonding sites, was utilized to immobilize Pt nanoparticles (NPs). Given the optimized metal–support interfacial contact (Fe3+–O(H)–Pt) between Pt NPs and NiFe–LDH/rGO nanosheets for Pt/NiFe–LDH/rGO electrocatalysts, the Pt/NiFe–LDH/rGO electrocatalysts displayed dramatically enhanced durability than that of Pt/Ni(OH)2/rGO counterpart as well as commercial Pt/C, and 86.5% of its initial catalytic activity can be maintained even after 1200 cycles of cyclic voltammetry (CV) tests during MOR. First-principle calculations toward the resultant M–O(H)–Pt (M = Fe3+, Ni2+) interfacial structure further corroborates that the NiFe–LDH nanosheets can provide stronger bonding sites (via the Fe3+–O(H)–Pt bonds) to immobilize Pt NPs than those of Ni(OH)2 nanosheets (via the Ni2+–O(H)–Pt bonds).

submitted time 2018-03-30 Hits3076Downloads1514 Comment 0

8. chinaXiv:201803.01547 [pdf]

Thermoelectric performance for SnSe hot-pressed at different temperature

D. Li; J. C. Li; X. Y. Qin; J. Zhang; C. J. Song; L. Wang; H. X. Xin
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

Herein, nanoparticles SnSe are prepared by fusion method together with ball-milling technique and the effect of hot-pressing temperatures on the thermoelectric properties of the dense materials is explored. Due to the optimization of carrier concentration, the peak figure of merit (ZT) value of the compacted material reaches 0.73 for SnSe sample hot-pressed at 400°C and 450°C. The present investigation indicates that the thermoelectric performance of the SnSe compound can be significantly improved by sintering with suitable temperature.

submitted time 2018-03-30 Hits2784Downloads1383 Comment 0

9. chinaXiv:201803.01548 [pdf]

Optimized thermoelectric properties of AgSbTe2 through adjustment of fabrication parameters

Jian Zhang; Xiaoying Qin; Di Li; Chunjun Song; Yongfei Liu; Hongxing Xin; Tianhua Zou; Yuanyue Li
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

AgSbTe2 bulk sample is obtained by hot-pressing under different fabrication parameters, and their thermoelectric properties are investigated in the temperature range of 300-550K. The highest ZT=0.86 is achieved at 475K for the sample hot-pressed at 423K and 500MPa due to the lower thermal conductivity and higher power factor. The results indicate that the optimized thermoelectric properties can be obtained for AgSbTe2 compound at the sintering temperature of 423K under the pressure of 500MPa.

submitted time 2018-03-30 Hits2977Downloads1463 Comment 0

10. chinaXiv:201803.01549 [pdf]

Enhanced thermoelectric performance of SnSe based composites with carbon black nanoinclusions

J. C. Li; D. Li; X. Y. Qin; Y. Y. Li; J. Zhang
Subjects: Physics >> Interdisciplinary Physics and Related Areas of Science and Technology

Recently, single crystalline SnSe and its sodium doped compound were reported to have an ultralow thermal conductivity and high thermoelectric figure of merit. However, the highest high thermoelectric figure of merit for polycrystalline SnSe-based materials is not larger than unity. In this study, we report a high thermoelectric figure of merit 1.21 at 903K along the hot pressing direction for polycrystalline SnSe, realized by incorporating a proper proportion of carbon black as nano-inclusions. The exceptional performance arises from the ultra-high power factor, which comes from a high electrical conductivity and an enhanced Seebeck coefficient through energy-dependent scattering.

submitted time 2018-03-30 Hits2830Downloads1397 Comment 0

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