摘要: The inner drift chamber of the BESIII is encountering serious aging problem after five year's running. For the first layer, the decrease in gas gain is about 26% from 2009 to 2013. The upgrade of the inner tracking detector has become an urgent problem for the BESIII experiment. An inner tracker using CMOS pixel sensors is an important candidate because of its great advantages on spatial resolution and radiation hardness. In order to carry out a Monte Carlo study on the expected performance, a Geant4-based full simulation for the silicon pixel detector has been implemented. The tracking method combining the silicon pixel inner tracker and outer drift chamber has been studied and a preliminary reconstruction software was developed. The Monte Carlo study shows that the performances including momentum resolution, vertex resolution and the tracking efficiency are significantly improved due to the good spatial resolution and moderate material budget of the silicon pixel detector.
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分类:
物理学
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核物理学
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引用:
ChinaXiv:201609.01023
(或此版本
ChinaXiv:201609.01023V1)
doi:10.12074/201609.01023
CSTR:32003.36.ChinaXiv.201609.01023.V1
- 推荐引用方式:
Qinglei Xiu,Mingyi Dong,Weidong Li,Huaimin Liu,Qiumei Ma,Qun Ouyang,Zhonghua Qin,Liangliang Wang,Linghui Wu,Ye Yuan,Yao Zhang.(2016).Study of the Tracking Method and Expected Performance of the Silicon Pixel Inner Tracker Applied in BESIII.中国科学院科技论文预发布平台.[ChinaXiv:201609.01023]
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